Low Voltage Organic/Inorganic Hybrid Complementary Inverter With Low Temperature All Solution Processed Semiconductor and Dielectric Layers

Author

Xiaojun Guo ; Linrun Feng ; Qingyu Cui ; Xiaoli Xu

Author_Institution

Dept. of Electron. Eng., Shanghai Jiao Tong Univ., Shanghai, China

Volume

35

Issue

5

fYear

2014

fDate

May-14

Firstpage

542

Lastpage

544

Abstract

A novel organic/inorganic hybrid integration architecture was developed to realize low-voltage complementary inverters with low temperature (not exceeding 150°C) solution processed semiconductor and dielectric layers. The p-type organic transistor and n-type zinc-oxide transistor used different approaches to reduce the operation voltage, and can thus be easier to be integrated with compatible solution based processes.

Keywords

II-VI semiconductors; dielectric thin films; liquid phase deposition; logic gates; low-power electronics; organic-inorganic hybrid materials; semiconductor thin films; thin film transistors; wide band gap semiconductors; zinc compounds; low temperature solution processed dielectric layers; low temperature solution processed semiconductor layer; low voltage organic-inorganic hybrid complementary inverter; n-type zinc-oxide transistor; operation voltage; p-type organic transistor; Dielectrics; Inverters; Logic gates; Low voltage; Thin film transistors; Zinc oxide; Low voltage; complementary logic; inverter; inverter.; metal oxide; organic semiconductor; thin-film transistor;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2308210

Filename

6767104