Investigation of a Vacuum Encapsulated Si-to-Si Contact Microswitch Operated From −60 °C to 400 °C

We report on characterization of Si-to-Si contact microswitches fabricated in an ultraclean encapsulation process. This three-terminal microswitch relies on a curved beam (source) that actuates toward the contact terminal (drain) by charging the control terminal (gate). The operation range of this switch from -60 °C to 300 °C is investigated, which approximately yields a resistance drift of -200 Ω/K. Our experiments include tests of the high-temperature lifetime during continuous ON-OFF cycles. By reducing Joule heating at the contact, preliminary results demonstrate at least 106 cycles longer lifetime at 400 °C. Subsequently, the failure mode is investigated and reported. The study of ultraclean Si-to-Si contact-based microswitches provides a crucial guideline to the field of mechanical and electrical failure mechanisms for harsh environment applications.