• DocumentCode
    3604032
  • Title

    Narrow-Band Type II Superlattice Photodetector With Detection Wavelength Shorter Than 2~\\mu text{m}

  • Author

    Jianliang Huang ; Wenquan Ma ; Yanhua Zhang ; Yulian Cao ; Ke Liu ; Wenjun Huang ; Shulong Lu

  • Author_Institution
    Inst. of Semicond., Beijing, China
  • Volume
    27
  • Issue
    21
  • fYear
    2015
  • Firstpage
    2276
  • Lastpage
    2279
  • Abstract
    We demonstrate that type II InAs/GaSb superlattice photodetector can reach the detection wavelength shorter than 2 μm by inserting AlSb barriers. The detector exhibits a narrow-band photoresponse feature (δλ/λ = 10.3%). At 77 K, the photoresponse maximum is at 1.84 μm and the Johnson noise limited detectivity is 1.1 × 1013 Jones. We show that unlike a typical broad-band response feature using the interband transitions, for a p-i-n detector in the short wavelength range, a narrow-band response feature is the case, which is ascribed to the stronger absorption for the higher energy photons from the n region.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light absorption; photodetectors; semiconductor superlattices; thermal noise; AlSb barriers; InAs-GaSb-AlSb; Johnson noise limited detectivity; absorption; detection wavelength; interband transitions; narrow-band photoresponse feature; narrow-band type II superlattice photodetector; p-i-n detector; temperature 77 K; wavelength 1.84 mum; Absorption; Detectors; Feature extraction; Photoconductivity; Photodetectors; Photonics; Superlattices; InAs/GaSb; infrared photodetector; narrow-band response; short wavelength; type II superlattice;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2015.2461541
  • Filename
    7169550