Title : 
Narrow-Band Type II Superlattice Photodetector With Detection Wavelength Shorter Than 
  
  
        
            Author : 
Jianliang Huang ; Wenquan Ma ; Yanhua Zhang ; Yulian Cao ; Ke Liu ; Wenjun Huang ; Shulong Lu
         
        
            Author_Institution : 
Inst. of Semicond., Beijing, China
         
        
        
        
        
        
        
            Abstract : 
We demonstrate that type II InAs/GaSb superlattice photodetector can reach the detection wavelength shorter than 2 μm by inserting AlSb barriers. The detector exhibits a narrow-band photoresponse feature (δλ/λ = 10.3%). At 77 K, the photoresponse maximum is at 1.84 μm and the Johnson noise limited detectivity is 1.1 × 1013 Jones. We show that unlike a typical broad-band response feature using the interband transitions, for a p-i-n detector in the short wavelength range, a narrow-band response feature is the case, which is ascribed to the stronger absorption for the higher energy photons from the n region.
         
        
            Keywords : 
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light absorption; photodetectors; semiconductor superlattices; thermal noise; AlSb barriers; InAs-GaSb-AlSb; Johnson noise limited detectivity; absorption; detection wavelength; interband transitions; narrow-band photoresponse feature; narrow-band type II superlattice photodetector; p-i-n detector; temperature 77 K; wavelength 1.84 mum; Absorption; Detectors; Feature extraction; Photoconductivity; Photodetectors; Photonics; Superlattices; InAs/GaSb; infrared photodetector; narrow-band response; short wavelength; type II superlattice;
         
        
        
            Journal_Title : 
Photonics Technology Letters, IEEE
         
        
        
        
        
            DOI : 
10.1109/LPT.2015.2461541