DocumentCode
3604032
Title
Narrow-Band Type II Superlattice Photodetector With Detection Wavelength Shorter Than
Author
Jianliang Huang ; Wenquan Ma ; Yanhua Zhang ; Yulian Cao ; Ke Liu ; Wenjun Huang ; Shulong Lu
Author_Institution
Inst. of Semicond., Beijing, China
Volume
27
Issue
21
fYear
2015
Firstpage
2276
Lastpage
2279
Abstract
We demonstrate that type II InAs/GaSb superlattice photodetector can reach the detection wavelength shorter than 2 μm by inserting AlSb barriers. The detector exhibits a narrow-band photoresponse feature (δλ/λ = 10.3%). At 77 K, the photoresponse maximum is at 1.84 μm and the Johnson noise limited detectivity is 1.1 × 1013 Jones. We show that unlike a typical broad-band response feature using the interband transitions, for a p-i-n detector in the short wavelength range, a narrow-band response feature is the case, which is ascribed to the stronger absorption for the higher energy photons from the n region.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light absorption; photodetectors; semiconductor superlattices; thermal noise; AlSb barriers; InAs-GaSb-AlSb; Johnson noise limited detectivity; absorption; detection wavelength; interband transitions; narrow-band photoresponse feature; narrow-band type II superlattice photodetector; p-i-n detector; temperature 77 K; wavelength 1.84 mum; Absorption; Detectors; Feature extraction; Photoconductivity; Photodetectors; Photonics; Superlattices; InAs/GaSb; infrared photodetector; narrow-band response; short wavelength; type II superlattice;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2015.2461541
Filename
7169550
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