High Performance Ridge Type PLZT Optical Switch With Offset Upper Electrode

Author

Guohua Hu ; Zhipeng Qi ; Binfeng Yun ; Ruohu Zhang ; Zhuyuan Wang ; Yiping Cui

Author_Institution

Adv. Photonics Center, Southeast Univ., Nanjing, China

Volume

27

Issue

21

fYear

2015

Firstpage

2257

Lastpage

2259

Abstract

(Pb,La)(Zr,Ti)O₃ (PLZT) has a high electro-optical coefficient and is very attractive for optical waveguide switches with high speed, low driving voltage, and compact size. The 1 × 2 PLZT optical switch using ridge type Mach-Zehnder interference structure has been designed and fabricated. By introducing offset upper electrodes instead of the conventional top electrodes, the insertion loss of the fabricated 1 × 2 PLZT optical switch was decreased 9.8 dB significantly with a crosstalk of -25.3 dB and the driving voltage <;10 V.

Keywords

electro-optical effects; electro-optical switches; lanthanum compounds; lead compounds; light interference; optical crosstalk; optical design techniques; optical fabrication; optical losses; optical waveguides; ridge waveguides; PLZT; compact size; driving voltage; electro-optical coefficient; high performance ridge type PLZT optical switch; insertion loss; offset upper electrode; optical crosstalk; optical waveguide switches; ridge type Mach-Zehnder interference structure; Electrodes; Electrooptical waveguides; Optical crosstalk; Optical device fabrication; Optical films; Optical switches; Multimode Interference (MMI); Optical Switches; PLZT; offset upper electrode;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2015.2459715

Filename

7174461