Thermally Engineered Flip-Chip InGaN/GaN Well-Ordered Nanocolumn Array LEDs

Thermally engineered flip-chip (FC) InGaN/GaN well-ordered nanocolumn array light-emitting diodes (LEDs) are demonstrated for the first time. A directional photoluminescence beam profile was observed from the n-side bottom of the GaN nanocolumns, which maintained an optically damage-free periodic arrangement of nanocolumns through the FC process involving Si substrate removal by wet etching. The developed LED achieved single-peak emission at ~ 570 nm in the middle of the visible range. The thermal resistance of the nanocolumn LED was significantly reduced using the FC configuration.