• DocumentCode
    3604324
  • Title

    Low-Power Effective Memory-Size Expanded TCAM Using Data-Relocation Scheme

  • Author

    Byung-Do Yang

  • Author_Institution
    Dept. of Electron. Eng., Chungbuk Nat. Univ., Cheongju, South Korea
  • Volume
    50
  • Issue
    10
  • fYear
    2015
  • Firstpage
    2441
  • Lastpage
    2450
  • Abstract
    This paper proposes a low-power effective memory-size expanded ternary content addressable memory (TCAM). The IP address of IPv6 extends to 128 bits, where the prefix bits store `0´ or `1´ and the remaining bits store `X´ (don´t care). Most prefixes are much shorter than 128 bits, so many TCAM cells store `X´. The proposed data-relocation TCAM (DR-TCAM) increases the number of IP addresses stored in the TCAM by relocating the data in the prefix bits into `X´ cells. The DR-TCAM has four types of banks. The type-0 bank is empty and inactivated. The type-1 and type-2 banks store four 32 bit words and two 64 bit words instead of a 128 bit word in the type-3 bank, respectively. Therefore, the type-1 and type-2 banks store four and two times larger IP addresses, respectively. In the simulation, the area and power consumption of the DR-TCAM decreased to 34% and 36% of those of the conventional TCAM for 4 K IP addresses, respectively. The DR-TCAM chip with 256 × 128 bit TCAM cells and 8 banks was fabricated using a 1.2 V 0.13 μm CMOS process. Its area was 0.87 mm 2 . Its energy/bit/search was 1.3 fJ at 200 MHz clock frequency when 4 banks were activated to store 256 IP addresses.
  • Keywords
    CMOS memory circuits; content-addressable storage; low-power electronics; CMOS process; IP address; IPv6 extends; TCAM cells; data-relocation scheme; frequency 200 MHz; low-power effective memory-size expanded TCAM; prefix bits; size 0.13 mum; ternary content addressable memory; type-0 bank; type-1 bank; type-2 bank; voltage 1.2 V; word length 32 bit; word length 64 bit; Arrays; Clocks; Computer aided manufacturing; IP networks; Power demand; Random access memory; Registers; Data relocation; don’t care; low power; memory expansion; ternary content addressable memory (TCAM);
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2015.2457908
  • Filename
    7181736