Title :
Investigation of Hydration Reaction-Induced Protons Transport in Etching-Stop a-InGaZnO Thin-Film Transistors
Author :
Jhe-Ciou Jhu ; Ting-Chang Chang ; Kuan-Chang Chang ; Chung-Yi Yang ; Wu-Ching Chou ; Cheng-Hsu Chou ; Wang-Cheng Chung
Author_Institution :
Dept. of Phys., Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan
Abstract :
In this letter, protons (hydrogen ions, H+ ions) transport-induced unstable transient electrical characteristics were found and studied in the etching-stop-layer in via-contact-type amorphous-indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) for the first time. By applying negative gate bias stress, more water molecules will be absorbed on the surface of the passivation layer, and thus the transmission of net protons in the etching-stop will increase. The proton transport model established in this letter can effectively analyze the a-IGZO TFTs instability using the threshold voltage (VT) determined from the current-voltage measurements, and which is unstable in a moist environment.
Keywords :
amorphous semiconductors; electric current measurement; etching; gallium compounds; hydrogen ions; indium compounds; passivation; protons; semiconductor device measurement; semiconductor device testing; solvation; thin film transistors; voltage measurement; zinc compounds; H+; InGaZnO; a-IGZO TFT instability; current-voltage measurements; etching-stop-layer; hydration reaction-induced protons transport; hydrogen ions; negative gate bias stress; net protons; passivation layer; proton transport model; thin-film transistors; threshold voltage; transient electrical characteristics; via-contact-type amorphous-indium-gallium-zinc-oxide; Electrodes; Ions; Logic gates; Protons; Stress; Thin film transistors; Water; Thin film transistor; a-IGZO; oxide thin film transistor; proton transport; thin film transistor;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2466103
