A Class-E Tuned W-Band SiGe Power Amplifier With 40.4% Power-Added Efficiency at 93 GHz

Author

Song, Peter ; Oakley, Michael A. ; Ulusoy, A. Cagri ; Kaynak, Mehmet ; Tillack, Bernd ; Sadowy, Gregory A. ; Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Tech, Atlanta, GA, USA

Volume

25

Issue

10

fYear

2015

Firstpage

663

Lastpage

665

Abstract

A W-band power amplifier with Class-E tuning in a 0.13 μm SiGe BiCMOS technology is presented. Voltage swing beyond BV_CBO is enabled by the cascode topology, low upper base resistance, and minimally overlapping current-voltage waveforms. At 93 GHz with 4.0 V bias, the peak power-added efficiency and saturated output power are measured to be 40.4% and 17.7 dBm, respectively. With the bias increased to 5.2 V, the peak power-added efficiency and saturated output power at 93 GHz are measured to be 37.6% and 19.3 dBm, respectively.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; circuit tuning; integrated circuit design; millimetre wave amplifiers; power measurement; BiCMOS technology; SiGe; base resistance; cascode topology; class-E tuned W-band power amplifier; class-E tuning; current-voltage waveforms; frequency 93 GHz; power-added efficiency; size 0.13 mum; voltage 4.0 V; voltage 5.2 V; voltage swing; Current measurement; Gain; Power generation; Power measurement; Silicon germanium; Switches; Tuning; Millimeter wave integrated circuits (mm-wave IC); power amplifiers (PA); silicon germanium (SiGe);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2015.2463231

Filename

7182790