Analysis of Source Doping Effect in Tunnel FETs With Staggered Bandgap

Author

Jie Min ; Jianzhi Wu ; Yuan Taur

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, CA, USA

Volume

36

Issue

10

fYear

2015

Firstpage

1094

Lastpage

1096

Abstract

The effect of source doping on tunnel FET (TFET) currents is investigated analytically for the case of an exponential barrier. Source depletion is coupled to the channel potential profile through the continuity of field at the junction edge. Closed form WKB (Wentzel-Kramers-Brillouin) integral are carried out by considering mixed electron and hole tunneling in heterojunction TFETs with a staggered bandgap. It is shown that there is an optimum source doping that maximizes the TFET current. A certain degree of source depletion actually helps because it lets low-barrier hole tunneling in the source to make up part of the tunneling path.

Keywords

field effect transistors; semiconductor device models; semiconductor doping; Wentzel-Kramers-Brillouin integral; exponential barrier; low-barrier hole tunneling; source depletion; source doping effect; staggered bandgap; tunnel FET; Analytical models; Doping; Heterojunctions; Logic gates; Photonic band gap; Semiconductor process modeling; Tunneling; Band-to-band tunneling; TFET; heterojunction;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2466676

Filename

7185370