Title :
Device Model for Graphene Spin Valves
Author :
Feilong Liu ; Yue Liu ; Smith, Darryl L. ; Ruden, P. Paul
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Minnesota, Minneapolis, MN, USA
Abstract :
A 1-D drift-diffusion device model for graphene spin valves is presented. The model describes properly the electronic and the spintronic properties, such as electrostatics, charge and spin injection, transport, spin relaxation, spin-current profiles, and bias-dependent magnetoresistance. The model calculations agree qualitatively with relevant experimental results, and provide physical insight.
Keywords :
graphene devices; magnetoelectronics; semiconductor device models; spin valves; 1-D drift-diffusion device model; bias-dependent magnetoresistance; charge injection; electrostatics; graphene spin valve; spin injection; spin relaxation; spin-current profile; spintronic property; Electric potential; Frequency modulation; Graphene; Logic gates; Magnetic tunneling; Spin polarized transport; Spin valves; Magnetoresistance (MR); semiconductor device modeling; spin valves; spin valves.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2464793
