DocumentCode :
3604784
Title :
Above-Threshold 
Noise Expression for Amorphous InGaZnO Thin-Film Transistors Considering Series Resistance Noise
Author :
Hongyu He ; Xueren Zheng ; Shengdong Zhang
Author_Institution :
Shenzhen Grad. Sch., Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China
Volume :
36
Issue :
10
fYear :
2015
Firstpage :
1056
Lastpage :
1059
Abstract :
The 1/f noise expression is presented for the amorphous InGaZnO thin-film transistors (TFTs) at low drain voltage. Considering the mobility power-law parameter α in the TFTs, Ghibaudo´s carrier number fluctuation model with the series resistance noise is applied to obtain the analytical normalized drain current noise power spectral density expression. The expression is compared with the numerical calculation, and verified by the available experimental data.
Keywords :
1/f noise; semiconductor device models; semiconductor device noise; thin film transistors; InGaZnO; Analytical models; Low-frequency noise; Resistance; Silicon; Thin film transistors; InGaZnO (IGZO); Thin-film transistor (TFT); low frequency noise; series resistance noise;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2469723
Filename :
7214228
Link To Document :
