Title :
Analytical Compact Model for Lightly Doped Nanoscale Ultrathin-Body and Box SOI MOSFETs With Back-Gate Control
Author :
Karatsori, Theano A. ; Tsormpatzoglou, Andreas ; Theodorou, Christoforos G. ; Ioannidis, Eleftherios G. ; Haendler, Sebastien ; Planes, Nicolas ; Ghibaudo, Gerard ; Dimitriadis, Charalabos A.
Author_Institution :
Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece
Abstract :
An analytical drain-current compact model for lightly doped short-channel ultrathin-body and box fully depleted silicon-on-insulator MOSFETs with back-gate control is presented. The model includes the effects of drain-induced barrier lowering, channel-length modulation, saturation velocity, mobility degradation, quantum confinement, velocity overshoot, and self-heating. The proposed model has been validated by comparing with the experimental transfer and output characteristics of devices with the channel lengths of 30 and 240 nm and with back bias varying from -3 to +3 V. The good accuracy of the model makes it suitable for implementation in circuit simulation tools.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; analytical drain-current compact model; back-gate control; box SOI MOSFET; box fully depleted silicon-on-insulator MOSFET; channel-length modulation; drain-induced barrier lowering; lightly doped nanoscale ultrathin-body; lightly doped short-channel ultrathin-body; mobility degradation; quantum confinement; saturation velocity; self-heating; velocity overshoot; Analytical models; Computational modeling; Logic gates; MOSFET; Semiconductor device modeling; Silicon; Threshold voltage; Back-gate control; compact model; fully depleted silicon-on-insulator (FD-SOI) ultrathin-body and box (UTBB) MOSFETs; fully depleted silicon-on-insulator (FD-SOI) ultrathin-body and box (UTBB) MOSFETs.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2464076
