Title :
Design of a Multi-Channel Low-Noise Readout ASIC for CdZnTe-Based X-Ray and
-Ray Spectrum Analyzer
Author :
Gan, B. ; Wei, T. ; Gao, W. ; Zheng, R. ; Hu, Y.
Author_Institution :
Inst. of Microelectron., Northwestern Polytech. Univ., Xi´an, China
Abstract :
In this paper, we report on the recent development of a 32-channel low-noise front-end readout ASIC for cadmium zinc telluride (CdZnTe) X-ray and γ-ray detectors. Each readout channel includes a charge sensitive amplifier, a CR-RC shaping amplifier and an analog output buffer. The readout ASIC is implemented using TSMC 0.35 - μm mixed-signal CMOS technology, the die size of the prototype chip is 2.2 mm ×4.8 mm. At room temperature, the equivalent noise level of a typical channel reaches 133 e- (rms) with the input parasitic capacitance of 0 pF for the average power consumption of 2.8 mW per channel. The linearity error is less than ±2% and the input energy dynamic range of the readout ASIC is from 10 keV to 1 MeV. The crosstalk between the channels is less than 0.4%. By connecting the readout ASIC to a CdZnTe detector, we obtained a γ-ray spectrum, the energy resolution is 1.8% at the 662-keV line of 137Cs source.
Keywords :
X-ray detection; application specific integrated circuits; cadmium compounds; gamma-ray detection; nuclear electronics; readout electronics; semiconductor counters; zinc compounds; 32-channel low-noise front-end readout ASIC; 137Cs source; CR-RC shaping amplifier; CdZnTe X-ray detector; CdZnTe gamma-ray detector; CdZnTe-Based gamma-ray spectrum analyzer; CdZnTe-based X-ray spectrum analyzer; analog output buffer; cadmium zinc telluride detector; channel noise level; channel power consumption; charge sensitive amplifier; energy resolution; input energy dynamic range; input parasitic capacitance; mixed-signal CMOS technology; multichannel low-noise readout ASIC design; prototype chip size; readout channel; Application specific integrated circuits; Capacitance; Detectors; Leakage currents; Logic gates; Noise; Transistors; $gamma $-ray; ASIC; CMOS; CdZnTe; X-ray; front-end; low-noise;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2446651