• DocumentCode
    3604976
  • Title

    Minority Carrier Lifetimes in InSb/InAsSb Quantum Dot and InAsSb nBn Photodetectors

  • Author

    Hoglund, Linda ; Ting, David Z.-Y ; Soibel, Alexander ; Hill, Cory J. ; Fisher, Anita M. ; Keo, Sam A. ; Gunapala, Sarath D.

  • Author_Institution
    Center of Infrared Photodetectors, Jet Propulsion Lab., Pasadena, CA, USA
  • Volume
    27
  • Issue
    23
  • fYear
    2015
  • Firstpage
    2492
  • Lastpage
    2495
  • Abstract
    The energy level scheme and the minority carrier lifetime in a type-II midwave InSb/InAs0.92Sb0.08 quantum dot structure were compared with bulk InAs0.915Sb0.085 using photoluminescence, absorption, and optical modulation response. Two hole energy levels separated by ~65 meV were identified in the quantum dots, and a decrease of the hole energy barrier with increasing temperatures was observed. The quantum dot minority carrier lifetime increased from 700 ns at 77 K to 1230 ns at 175 K, and is significantly longer than the bulk InAs0.915Sb0.085 lifetime of 300 ns. By insertion of quantum dots in the bulk material, the dominating recombination mechanism changed from the Shockley-Read-Hall to radiative recombination.
  • Keywords
    III-V semiconductors; arsenic compounds; carrier lifetime; indium compounds; infrared detectors; optical modulation; photodetectors; photoluminescence; semiconductor quantum dots; InAsSb nBn photodetectors; InSb-InAs0.92Sb0.08; InSb/InAsSb quantum dot; Shockley-Read-Hall; absorption; energy level scheme; infrared detectors; minority carrier lifetimes; optical modulation; photoluminescence; radiative recombination; recombination mechanism; temperature 175 K; temperature 77 K; time 300 ns; time 700 ns to 1230 ns; two-hole energy levels; Absorption; Charge carrier lifetime; Detectors; Energy states; Radiative recombination; Temperature dependence; Temperature measurement; InAsSb; InSb; Infrared detectors; absorption; minority carrier lifetime; photoluminescence; quantum dots;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2015.2472396
  • Filename
    7225142