DocumentCode
3605023
Title
Narrow Ridge 
- 
Cascade Diode Lasers With Output Power Above 100 mW at Room
Author
Rui Liang ; Hosoda, Takashi ; Shterengas, Leon ; Stein, Aaron ; Ming Lu ; Kipshidze, Gela ; Belenky, Gregory
Author_Institution
Dept. of Electr. & Comput. Eng., Stony Brook Univ., Stony Brook, NY, USA
Volume
27
Issue
23
fYear
2015
Firstpage
2425
Lastpage
2428
Abstract
Shallow narrow ridge two-stage cascade GaSb-based type-I quantum well diode lasers emitting at λ ≈ 3 μm were designed and fabricated. Efficient carrier recycling improved the device power conversion and slope efficiencies as compared with the standard multiple quantum well diode lasers. Devices generated more than 100 mW of continuous-wave output power in nearly diffraction limited beam at room temperature. Studies of the current dependence of the modal gain spectra confirmed increased tendency to lateral current spreading in cascade laser heterostructures as compared with the regular diode lasers.
Keywords
III-V semiconductors; laser beams; light diffraction; optical design techniques; optical fabrication; quantum cascade lasers; GaSb; continuous-wave output power; lateral current spreading; modal gain spectra; nearly diffraction limited beam; room temperature; shallow narrow ridge two-stage cascade gallium antimonide-based type-I quantum well diode laser design; shallow narrow ridge two-stage cascade gallium antimonide-based type-I quantum well diode laser fabrication; temperature 293 K to 298 K; wavelength 3 mum; Diode lasers; Optical device fabrication; Optical losses; Optical waveguides; Power generation; Quantum cascade lasers; Threshold current; GaSb; cascade lasers; mid-infrared; semiconductor lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2015.2464704
Filename
7226801
Link To Document