Title :
Dielectric Engineered Tunnel Field-Effect Transistor
Author :
Ilatikhameneh, Hesameddin ; Ameen, Tarek A. ; Klimeck, Gerhard ; Appenzeller, Joerg ; Rahman, Rajib
Author_Institution :
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high-performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result, a record ON-current of ~1000 μA/μm and a subthreshold swing (SS) below 20 mV/decade are predicted for WTe2 DE-TFET. The proposed TFET works based on a homojunction channel and electrically doped contacts both of which are immune to interface states, dopant fluctuations, and dopant states in the bandgap, which typically deteriorate the OFF-state performance and SS in the conventional TFETs.
Keywords :
field effect transistors; high-k dielectric thin films; OFF-state performance; WTe2; dielectric engineered tunnel field-effect transistor; dopant fluctuations; dopant states; electrically doped contacts; high electric field; high-k dielectrics; high-performance steep transistor; homojunction channel; interface states; low-k dielectrics; subthreshold swing; tunnel junction; Dielectrics; High K dielectric materials; Junctions; Logic gates; Performance evaluation; Photonic band gap; Transistors; NEGF; TFETs; TMDs; WSe2; WTe2; dielectric engineering; electrical doping; high-k; low-k;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2474147
