Dielectric Engineered Tunnel Field-Effect Transistor

Author

Ilatikhameneh, Hesameddin ; Ameen, Tarek A. ; Klimeck, Gerhard ; Appenzeller, Joerg ; Rahman, Rajib

Author_Institution

Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

36

Issue

10

fYear

2015

Firstpage

1097

Lastpage

1100

Abstract

The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high-performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result, a record ON-current of ~1000 μA/μm and a subthreshold swing (SS) below 20 mV/decade are predicted for WTe₂ DE-TFET. The proposed TFET works based on a homojunction channel and electrically doped contacts both of which are immune to interface states, dopant fluctuations, and dopant states in the bandgap, which typically deteriorate the OFF-state performance and SS in the conventional TFETs.

Keywords

field effect transistors; high-k dielectric thin films; OFF-state performance; WTe₂; dielectric engineered tunnel field-effect transistor; dopant fluctuations; dopant states; electrically doped contacts; high electric field; high-k dielectrics; high-performance steep transistor; homojunction channel; interface states; low-k dielectrics; subthreshold swing; tunnel junction; Dielectrics; High K dielectric materials; Junctions; Logic gates; Performance evaluation; Photonic band gap; Transistors; NEGF; TFETs; TMDs; WSe2; WTe2; dielectric engineering; electrical doping; high-k; low-k;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2474147

Filename

7229273