DocumentCode :
3605161
Title :
60 GHz CMOS gain-boosted LNA with transformer feedbacked neutraliser
Author :
Ki-Jin Kim ; Suk-hui Lee ; Sanghoon Park ; Kwang-Ho Ahn
Author_Institution :
Korea Electron. Technol. Inst., Seongnam, South Korea
Volume :
51
Issue :
18
fYear :
2015
Firstpage :
1461
Lastpage :
1462
Abstract :
A 60 GHz low-noise amplifier (LNA) using standard 65 nm CMOS technology is presented. A gain of the 60 GHz amplifier was boosted by using a transformer feedbacked capacitor neutraliser. To stabilise the process variations caused by the positive feedback system, the body node of the triple well was adjusted to tune the capacitor value. The theory, simulation and measurements are presented. An implementation prototype is evaluated using on-wafer proving. The LNA showed a measured peak gain of 30 dB and a measured noise of 4.6 dB under 8.9 mW power consumption with a 1 V supply voltage. The measured IIP3 was -26 dBm. This is believed to be the first CMOS 60 GHz LNA to compensate the overlap capacitor with a single-ended structure.
Keywords :
CMOS analogue integrated circuits; low noise amplifiers; transformers; CMOS gain-boosted LNA; IIP3; frequency 60 GHz; gain 30 dB; low-noise amplifier; size 65 nm; transformer feedbacked capacitor neutraliser; voltage 1 V;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2015.0336
Filename :
7229549
Link To Document :
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