DocumentCode :
3605171
Title :
AlN Two-Dimensional-Mode Resonators for Ultra-High Frequency Applications
Author :
Cassella, Cristian ; Piazza, Gianluca
Author_Institution :
Carnegie Mellon Univ., Pittsburgh, PA, USA
Volume :
36
Issue :
11
fYear :
2015
Firstpage :
1192
Lastpage :
1194
Abstract :
In this letter, we present the first prototype of aluminum nitride two-dimensional-mode resonators (2DMRs) for operation in the ultra-high-frequency range. The 2DMRs in this letter are made of thick AlN films (5.9μm) and rely on both the d31 and the d33 coefficients of AlN to attain high electromechanical coupling (kt2 ), low motional resistance, and a limited lithographic control of the resonance frequency. kt2 > 3.4%, a mechanical quality factor larger than 2400, and >10% lithographic variation of the center frequency were demonstrated.
Keywords :
III-V semiconductors; Q-factor; UHF resonators; aluminium compounds; wide band gap semiconductors; 2DMR; AlN; aluminum nitride; electromechanical coupling; lithographic control; mechanical quality factor; motional resistance; two-dimensional-mode resonator; ultrahigh frequency application; Aluminum nitride; Films; Frequency control; Gratings; III-V semiconductor materials; Resistance; Resonant frequency; AlN; Filters; MEMS; Microwave; Resonators; filters; microwave; resonators;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2475172
Filename :
7230242
Link To Document :
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