Title :
Optoelectronic Investigation of Sb-Doped Cu(In,Ga)Se2
Author :
Mansfield, Lorelle M. ; Kuciauskas, Darius ; Dippo, Patricia ; Li, Jian V. ; Bowers, Karen ; To, Bobby ; DeHart, Clay ; Ramanathan, Kannan
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
In this study, we incorporated Sb into the precursor that was subsequently converted to Cu(In,Ga)Se2 (CIGS) by a selenization process. We observed enhanced grain size and improved device performance compared with similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to explore the changes in native defect compensation and evaluate the origin of a lower energy PL peak that is not typically seen in CIGS.
Keywords :
antimony; copper compounds; electric admittance; gallium compounds; grain size; indium compounds; photoluminescence; semiconductor thin films; ternary semiconductors; time resolved spectra; Cu(InGa)Se2:Sb; admittance spectroscopy; capacitance-voltage characterization; grain size; native defect compensation; optoelectronic properties; selenization; time-resolved photoluminescence; Doping; Grain size; Photoluminescence; Photovoltaic cells; Thin films; Admittance spectroscopy; Cu(In; Ga)Se2 (CIGS); Sb doping; defects; photoluminescence; photovoltaic cells; thin films;
Journal_Title :
Photovoltaics, IEEE Journal of
DOI :
10.1109/JPHOTOV.2015.2470082
