DocumentCode :
3605207
Title :
New Findings on the Drain-Induced Barrier Lowering Characteristics for Tri-Gate Germanium-on-Insulator p-MOSFETs
Author :
Shu-Hua Wu ; Chang-Hung Yu ; Pin Su
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
3
Issue :
6
fYear :
2015
Firstpage :
441
Lastpage :
446
Abstract :
This paper investigates the intrinsic drain-induced barrier lowering (DIBL) characteristics for tri-gate germanium-on-insulator (GeOI) p-MOSFETs through theoretical calculation by analytical solution of 3-D Poisson´s equation corroborated with TCAD numerical simulation. It is found that, relative to the silicon-on-insulator counterpart, there exists a build-in negative substrate bias in the GeOI PFET. This built-in substrate bias, stemming mainly from the large discrepancy in bandgap between Ge and Si, pulls the carriers toward the channel/BOX interface and thus degrades the DIBL of the GeOI PFET beyond what permittivity predicts. This new mechanism has to be considered when designing or benchmarking tri-gate GeOI p-MOSFETs.
Keywords :
MOSFET; Poisson equation; germanium; technology CAD (electronics); 3D Poisson equation; BOX interface; Ge; GeOI PFET; Si; TCAD numerical simulation; build-in negative substrate bias; drain-induced barrier lowering characteristic; p-MOSFET; permittivity; silicon-on-insulator; trigate germanium-on-insulator; MOSFET; Permittivity; Poisson equations; Silicon-on-insulator; DIBL; GeOI; SOI; Tri-gate MOSFET; multi-gate MOSFET; tri-gate MOSFET;
fLanguage :
English
Journal_Title :
Electron Devices Society, IEEE Journal of the
Publisher :
ieee
ISSN :
2168-6734
Type :
jour
DOI :
10.1109/JEDS.2015.2475262
Filename :
7234846
Link To Document :
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