DocumentCode :
3605226
Title :
High-Performance Electrolyte–Insulator–Semiconductor pH Sensors Using High- 
CeO2 Sensing Films
Author :
Tung-Ming Pan ; Chih-Wei Wang ; Sheng-Yu Pan
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Volume :
36
Issue :
11
fYear :
2015
Firstpage :
1195
Lastpage :
1197
Abstract :
(EIS) sensor using a high-κ CeO2 sensing membrane, which was deposited on a Si substrate through sputtering. We used X-ray diffraction and X-ray photoelectron spectroscopy to study the structural properties of these films that were annealed at various temperatures. The CeO2 EIS sensor annealed at 900 °C exhibited a higher sensitivity of 64.8 mV/pH, lower hysteresis voltage of 1 mV, and smaller drift rate of 0.78 mV/h compared with other annealing temperatures, presumably suggesting the formation of a well-crystallized CeO2 film featuring a high dielectric constant and having a high fraction of Ce3+.
Keywords :
X-ray diffraction; X-ray photoelectron spectra; annealing; cerium compounds; chemical sensors; electrolytes; membranes; pH measurement; sputter deposition; thin film sensors; CeO2; EIS sensor; High-κ CeO2 sensing film membrane; X-ray diffraction; X-ray photoelectron spectroscopy; annealing; dielectric constant; electrolyte-insulator-semiconductor pH sensor; sputtering deposition; structural property; temperature 900 degC; voltage 1 mV; well-crystallized film; Annealing; Biomembranes; Films; Sensitivity; Sensor phenomena and characterization; Temperature sensors; CeO2; Electrolyte–insulator–semiconductor (EIS); Electrolyte???insulator???semiconductor (EIS); sensor;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2475627
Filename :
7234875
Link To Document :
