Title :
Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
Author :
Mengyuan Hua ; Cheng Liu ; Shu Yang ; Shenghou Liu ; Kai Fu ; Zhihua Dong ; Yong Cai ; Baoshun Zhang ; Chen, Kevin J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Abstract :
In this paper, we systematically investigated the leakage and breakdown mechanisms of the low-pressure chemical vapor deposition (LPCVD) silicon nitride thin film deposited on AlGaN/GaN heterostructures. The LPCVD-SiNx gate dielectric exhibits low leakage and high breakdown electric field. The dominant mechanism of the leakage current through LPCVD-SiNx gate dielectric is identified to be Poole-Frenkel emission at low electric field and Fowler-Nordheim tunneling at high electric field. Both electric-field-accelerated and temperature-accelerated time-dependent dielectric breakdown of the LPCVD-SiNx gate dielectric were also investigated.
Keywords :
III-V semiconductors; MIS devices; Poole-Frenkel effect; aluminium compounds; chemical vapour deposition; electric breakdown; gallium compounds; high electron mobility transistors; leakage currents; semiconductor device reliability; silicon compounds; wide band gap semiconductors; AlGaN; Fowler-Nordheim tunneling; GaN; LPCVD; MIS-HEMT; Poole-Frenkel emission; SiNx; electric-field-accelerated dielectric breakdown; gate dielectric reliability; leakage characterization; leakage current; low-pressure chemical vapor deposition; silicon nitride thin film; temperature-accelerated time-dependent dielectric breakdown; Aluminum gallium nitride; Dielectrics; Electric breakdown; Gallium nitride; Leakage currents; Logic gates; Wide band gap semiconductors; Gallium nitride; gate dielectric; low-pressure chemical vapor deposition (LPCVD); silicon nitride; silicon nitride.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2469716
