Title :
The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review
Author :
Hoang-Phuong Phan ; Dao, Dzung Viet ; Nakamura, Koichi ; Dimitrijev, Sima ; Nam-Trung Nguyen
Author_Institution :
Queensland Micro- & Nanotechnol. Centre, Griffith Univ., Griffith, NSW, Australia
Abstract :
Silicon carbide (SiC) is one of the most promising materials for applications in harsh environments thanks to its excellent electrical, mechanical, and chemical properties. The piezoresistive effect of SiC has recently attracted a great deal of interest for sensing devices in hostile conditions. This paper reviews the piezoresistive effect of SiC for mechanical sensors used at elevated temperatures. We present experimental results of the gauge factors obtained for various poly-types of SiC films and SiC nanowires, the related theoretical analysis, and an overview on the development of SiC piezoresistive transducers. The review also discusses the current issues and the potential applications of the piezoresistive effect in SiC.
Keywords :
microsensors; nanowires; piezoresistive devices; semiconductor thin films; silicon compounds; transducers; wide band gap semiconductors; MEMS sensors; SiC; SiC films; SiC nanowires; SiC piezoresistive transducers; chemical properties; electrical properties; gauge factors; harsh environments; high temperatures; mechanical properties; mechanical sensors; piezoresistive effect; silicon carbide; Micromechanical devices; Piezoresistance; Silicon; Silicon carbide; Temperature; Temperature sensors; Silicon carbide; harsh environments; microelectromechanical systems (MEMS); microelectromechanical systems (MEMS).; piezoresistance; piezoresistive effect;
Journal_Title :
Microelectromechanical Systems, Journal of
DOI :
10.1109/JMEMS.2015.2470132
