Title :
Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment
Author :
Ji Chen ; Kuan-Chang Chang ; Ting-Chang Chang ; Tsung-Ming Tsai ; Chih-Hung Pan ; Rui Zhang ; Jen-Chung Lou ; Tian-Jian Chu ; Cheng-Hsien Wu ; Min-Chen Chen ; Ya-Chi Hung ; Yong-En Syu ; Jin-Cheng Zheng ; Sze, Simon M.
Author_Institution :
Sch. of Software & Microelectron., Peking Univ., Beijing, China
Abstract :
In this letter, we demonstrate the differing influences of a nitrogen buffering effect in both the switching layer and the indium-tin-oxide (ITO) electrode layer of resistive random access memory (RRAM) which has undergone an NH3 treatment. The nitrogen buffering effect in the switching layer cannot counteract the electric field force, leading to similar I-V characteristics compared with the ITO/Hf:SiO2/TiN control structure RRAM. The nitrogen in the ITO electrode layer, however, works as an oxygen buffer and makes it easier for the redox reaction to occur, leading to improvements in performance, such as concentrated voltages and better endurance.
Keywords :
ammonia; electrodes; indium compounds; nitrogen; oxygen; resistive RAM; tin compounds; I-V characteristic; ITO electrode layer; RRAM; ammonia treatment; electric field force; indium-tin-oxide-capped resistive random access memory; nitrogen buffering effect; oxygen buffer; redox reaction; Electrodes; Electron devices; Indium tin oxide; Nitrogen; Random access memory; Resistance; Switches; NH3 treatment; RRAM; electric field force; nitrogen buffering effect;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2477163
