• DocumentCode
    3605548
  • Title

    Effectiveness of Surface Potential Fluctuation for Representing Inversion-Layer Mobility Limited by Coulomb Scattering in MOFETs

  • Author

    Weili Cai ; Takenaka, Mitsuru ; Takagi, Shinichi

  • Author_Institution
    Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
  • Volume
    36
  • Issue
    11
  • fYear
    2015
  • Firstpage
    1183
  • Lastpage
    1185
  • Abstract
    In this letter, the effectiveness of surface potential fluctuation (σs), experimentally extracted from the conductance method, in representing the mobility limited by Coulomb scattering (μcoulomb) due to MOS interface charges has been experimentally examined in Si MOSFETs. It is found that μcoulomb can be described as a universal line proportional to σs-2, irrespective of the conditions of MOS interface charges, even under the coexistence of positive and negative charges, where threshold voltage shift (ΔVth) cannot represent μcoulomb. This result can be explained by considering that σs2 more directly corresponds to the total amount of Coulomb scattering centers.
  • Keywords
    MOSFET; inversion layers; surface potential; Coulomb scattering; MOS interface charge; MOSFET; Si; conductance method; inversion-layer mobility representation; metal oxide semiconductor field effect transistor; surface potential fluctuation; threshold voltage shift; Fluctuations; Interface states; Logic gates; Scattering; Silicon; Stress; Coulomb scattering; Inversion layer mobility; conductance method; interface charges; inversion layer mobility; surface potential fluctuation;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2015.2477360
  • Filename
    7247658
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3605548