Title :
Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer
Author :
Chand, Umesh ; Kuan-Chang Huang ; Chun-Yang Huang ; Tseung-Yuen Tseng
Author_Institution :
Dept. of Electron. EngineeringInstitute of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, the nonlinear switching mechanism of the Ti/HfO2/Al2O3/TiN crossbar structure resistive random access memory device with good reliability is investigated. The nonlinearity of the device can be revealed by inserting a large bandgap of an Al2O3 thin layer between the TiN bottom electrode and the HfO2 switching film. The nonlinear switching mechanism caused by Flower-Nordheim tunneling involves the tunneling barrier of the Al2O3 layer. Besides, the nonlinear behavior is also sensitive to the thickness of the inserting Al2O3 layer. A high nonlinear factor of 37, large endurance more than 104, and good retention properties are achieved in the Ti/HfO2/Al2O3 (1-nm)/TiN structure.
Keywords :
aluminium compounds; energy gap; hafnium compounds; resistive RAM; titanium; titanium compounds; tunnelling; Flower-Nordheim tunneling; HfO2; Ti-HfO2-Al2O3-TiN; bandgap tunneling barrier layer; crossbar RRAM; electrode; nonlinear switching mechanism; resistive random access memory device; switching film; Aluminum oxide; Electrodes; Hafnium compounds; Photonic band gap; Switches; Tin; Tunneling; Double layer; HfO₂; HfO2; nonlinear; resistive random access memory (RRAM); resistive switching; tunneling barrier; tunneling barrier.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2471835
