DocumentCode :
3605821
Title :
Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10- 
-Thick n-GaN Template
Author :
Yu-An Chen ; Chia-Wei Chang ; Cheng-Huang Kuo
Author_Institution :
Inst. of Lighting & Energy Photonics, Nat. Chiao Tung Univ., Tainan, Taiwan
Volume :
36
Issue :
11
fYear :
2015
Firstpage :
1135
Lastpage :
1137
Abstract :
Numerical and experimental demonstrations were performed in this letter to enhance the current spreading length of nitride-based light-emitting diodes (LEDs) with a 10-μm-thick n-GaN template on an AlN/high-aspect ratio patterned sapphire substrate template via hydride vapor phase epitaxy. At an injection current of 20 mA, the output powers were 4.34 and 6.39 mW for a conventional LED and an LED with a 10-μm-thick n-GaN template, respectively. The larger LED output power is attributed to the enhanced current spreading length, which improved the heat dissipation ability and the improved crystal quality.
Keywords :
III-V semiconductors; cooling; gallium compounds; light emitting diodes; sapphire; wide band gap semiconductors; GaN; LED; current 20 mA; heat dissipation ability; high-aspect ratio; hydride vapor phase epitaxy; injection current; nitride-based light-emitting diodes; numerical simulation; power 4.34 mW; power 6.39 mW; sapphire substrate template; size 10 mum; spreading length; Conductivity; Gallium nitride; Light emitting diodes; Power generation; Resistance; Substrates; Temperature; AlN; HVPE; LED; PSS;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2478969
Filename :
7268843
Link To Document :
