Title :
Study of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout Chip
Author :
Schioppa, E.J. ; Idarraga, J. ; van Beuzekom, M. ; Visser, J. ; Koffeman, E. ; Heijne, E. ; Engel, K.J. ; Uher, J.
Author_Institution :
Nikhef, Amsterdam, Netherlands
Abstract :
A 300 μm thick thin p-on-n silicon sensor was connected to an energy sensitive pixel readout ASIC and exposed to a beam of highly energetic charged particles. By exploiting the spectral information and the fine segmentation of the detector, we were able to measure the evolution of the transverse profile of the charge carriers cloud in the sensor as a function of the drift distance from the point of generation. The result does not rely on model assumptions or electric field calculations. The data are also used to validate numerical simulations and to predict the detector spectral response to an X-ray fluorescence spectrum for applications in X-ray imaging.
Keywords :
X-ray fluorescence analysis; X-ray imaging; application specific integrated circuits; nuclear electronics; readout electronics; silicon radiation detectors; X-ray fluorescence spectrum; X-ray imaging application; charge carrier cloud transverse profile evolution; detector segmentation; detector spectral response prediction; electric field calculation; energy sensitive pixel readout ASIC; energy sensitive pixel readout chip; highly energetic charged particle beam; numerical simulation; silicon detector charge diffusion; spectral information; thick thin p-on-n silicon sensor; Atmospheric measurements; Charge measurement; Detectors; Energy measurement; Particle measurements; Semiconductor device measurement; Silicon; Charge sharing; diffusion; semiconductor detectors; timepix; x-ray imaging;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2475124
