Title :
2.4 GHz CMOS self-biased power amplifier with embedded diode lineariser
Author :
Zhixiong Ren ; Kefeng Zhang ; Lanqi Liu ; Zhenglin Liu ; Xiaofei Chen ; Dongsheng Liu ; Xuecheng Zou
Author_Institution :
Sch. of Opt. & Electron. Inf., Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
A high-linearity CMOS power amplifier (PA) operating at 2.4 GHz with an integrated diode lineariser is presented. A diode-connected N-type MOS transistor is used to increase the Vgs of the power transistor as input power increases for linearity improvement. The CMOS PA fabricated in 180 nm CMOS technology achieved 32 dB small signal gain, 30.2 dBm Psat, 28.2 dBm P1 dB, and a 31.1% peak power added efficiency. By adopting the proposed diode lineariser, the output 1 dB is improved from 24.9 to 28.2 dBm.
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; linearisation techniques; power MOSFET; semiconductor diodes; CMOS PA; PAE; complementary metal oxide semiconductor; diode-connected N-type MOS transistor; embedded diode lineariser; frequency 2.4 GHz; gain 32 dB; integrated diode lineariser; power added efficiency; power transistor; self-biased power amplifier; size 180 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.0917
