Afterpulsing Characteristics of Free-Running and Time-Gated Single-Photon Avalanche Diodes in 130-nm CMOS

Author

Palubiak, Darek P. ; Zhiyun Li ; Deen, M. Jamal

Author_Institution

Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, ON, Canada

Volume

62

Issue

11

fYear

2015

Firstpage

3727

Lastpage

3733

Abstract

The temperature-dependent afterpulsing characteristics of single-photon avalanche diodes (SPADs) fabricated in a standard digital 130-nm CMOS technology are described. Avalanche interarrival time statistics are analyzed to obtain the afterpulsing probabilities (APs) for 81and 110-μm² active area SPAD pixels using free running (FR) and time-gated (TG) front-end circuits. A strong reduction in AP was evident in the TG mode compared with the FR SPAD pixels. Optimal operating conditions in terms of hold-off time and temperature were found for <;1% AP.

Keywords

CMOS integrated circuits; avalanche diodes; probability; AP; CMOS technology; SPAD; afterpulsing probability; avalanche interarrival time statistic; complementary metal oxide semiconductor; free running front-end circuit; size 130 nm; temperature-dependent afterpulsing characteristic; time-gated front-end circuit; time-gated single-photon avalanche diode; CMOS integrated circuits; Cathodes; Histograms; Logic gates; Semiconductor device measurement; Temperature distribution; Temperature measurement; Afterpulsing; CMOS avalanche photodiode (APD); Raman; dark count rate (DCR); fluorescence lifetime imaging (FLIM); positron emission tomography (PET); single-photon avalanche diode (SPAD); time gating; time gating.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2475126

Filename

7274346