Title :
140 Gb/s Serializer Using Clock Doublers in 90 nm SiGe Technology
Author :
Clarke, Ryan ; LeRoy, Mitchell R. ; Raman, Srikumar ; Neogi, Tuhin Guha ; Kraft, Russell P. ; McDonald, John F.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
Many design challenges exist in achieving high frequency clocking for high-speed applications. This paper describes a new clock distribution technique and clocking approach with the use of clock doublers in close proximity to sub-circuits to achieve higher data rates, and in many cases, reduce design complexity and power in serializers. A half-rate 4:1 serializer using this unique frequency doubling clock distribution technique has been implemented in a 90 nm BiCMOS process. The design includes a 210-1 pattern length LFSR with phase shifting logic as the testing circuit and a high bandwidth cascoded output driver. The chip has the dimensions of 1.8 × 2.2 mm 2 and consumes 5.78 W from a -3.4 V supply voltage at 140 Gb/s.
Keywords :
BiCMOS digital integrated circuits; Ge-Si alloys; clock distribution networks; frequency multipliers; integrated circuit design; integrated circuit testing; logic circuits; logic design; logic testing; phase shifters; shift registers; BiCMOS process; LFSR; SiGe; cascoded output driver; clock doublers; frequency doubling clock distribution technique; high frequency clocking; linear feedback shift register; phase shifting logic; power 5.78 W; serializer; size 1.8 mm; size 2.2 mm; size 90 nm; subcircuits; testing circuit; voltage 3.4 V; Clocks; Layout; Multiplexing; Resistors; Silicon germanium; Synchronization; Transistors; 4:1 serializer; Clock distribution; LFSR; PRBS; SiGe bipolar technology; clock doubler; frequency doubler; multiplexor;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2015.2472600