A Highly Linear CMOS Active Inductor and Its Application in Filters and Power Dividers

Author

Bhattacharya, Ritabrata ; Basu, Ananjan ; Koul, Shiban K.

Author_Institution

Centre for Appl. Res. in Electron., Indian Inst. of Technol., Delhi, Delhi, India

Volume

25

Issue

11

fYear

2015

Firstpage

715

Lastpage

717

Abstract

A high linearity active inductor with a maximum measured Q of 70 and an input 1 dB compression point (Pin, 1dB) of + 8 dBm (associated with a 10% increase in inductance from its small signal value with higher input power) is presented in 180 nm CMOS. Applications of such an inductor in extending the Pin,1 dB of a Wilkinson power divider and a fully integrated second order capacitively coupled bandpass filter for blocker tolerant receivers are also demonstrated. Up to an input power of + 5 dBm, the power divider is seen to have a measured insertion loss (S21) of dB. In each case, to the best of our knowledge, this work reports the highest measured Pin,1dB.

Keywords

CMOS integrated circuits; active filters; gyrators; inductors; power dividers; Wilkinson power divider; filter application; linear CMOS active inductor; size 180 nm; Artificial intelligence; Band-pass filters; CMOS integrated circuits; Noise measurement; Topology; Transistors; Tuning; Active inductor (AI); CMOS; Wilkinson power divider (WPD); filter; linearity;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2015.2479718

Filename

7275073