Title :
Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes
Author :
Rao, Sandro ; Pangallo, Giovanni ; Della Corte, Francesco G.
Author_Institution :
Dipt. di Ing. dell´Inf., delle Infrastrutture e dell´Energia Sostenibile, Univ. degli Studi Mediterranea, Reggio Calabria, Italy
Abstract :
The linear dependence on temperature of the voltage drop difference measured on two diodes biased at different constant currents has been characterized in a range from room temperature up to 573 K. The realized proportional to absolute temperature sensor shows a good level of linearity and the corresponding rms error lower than 0.3%. Moreover, a maximum sensitivity of 610 μV/K has been obtained, with an extrapolated output converging to 0 V at T = 0 K, in agreement with theory and allowing a single-point temperature calibration.
Keywords :
calibration; electric potential; p-i-n diodes; silicon compounds; temperature measurement; temperature sensors; voltage measurement; wide band gap semiconductors; 4H-silicon carbide p-i-n diode; SiC; extrapolation; single-point temperature calibration; temperature 293 K to 298 K; temperature sensor; voltage drop difference measurement; P-i-n diodes; Schottky diodes; Sensitivity; Temperature distribution; Temperature measurement; Temperature sensors; P-i-n diodes; Power semiconductor devices; Silicon carbide; Temperature sensors; p-i-n diodes; power semiconductor devices; silicon carbide; temperature sensors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2481721
