DocumentCode :
3607052
Title :
Mist-CVD Grown Sn-Doped 
-Ga2O3 MESFETs
Author :
Dang, Giang T. ; Kawaharamura, Toshiyuki ; Furuta, Mamoru ; Allen, Martin W.
Author_Institution :
Dept. of Electr. & Comput. EngineeringThe MacDiarmid Inst. for Adv. Mater. & Nanotechnol., Univ. of Canterbury, Christchurch, New Zealand
Volume :
62
Issue :
11
fYear :
2015
Firstpage :
3640
Lastpage :
3644
Abstract :
This paper demonstrates the use of cost-effective solution-processed α-Ga2O3 thin films (TFs) for electronic device applications. MESFETs based on AgOx Schottky diode (SD) gates were fabricated on highly crystalline Sn-doped α-Ga2O3 TFs, grown by mist chemical vapor deposition at atmospheric pressure and a substrate temperature of only 400°C. The rectification ratio and reverse breakdown voltage of typical SDs were 6 × 106 and 19.6 V, respectively. The ON-OFF ratio of the corresponding transistors was 2 × 107. The MESFETs that could withstand drain voltages of up to 48 V were also realized.
Keywords :
Schottky diodes; Schottky gate field effect transistors; amorphous semiconductors; chemical vapour deposition; electric breakdown; gallium compounds; semiconductor doping; semiconductor thin films; silver compounds; tin; AgOx; Ga2O3; MESFET; Schottky diode gate; Sn; amorphous semiconductor; atmospheric pressure; chemical vapor deposition; electronic device application; mist-CVD; reverse breakdown voltage; substrate temperature; temperature 400 C; thin film; Chemical vapor deposition; Fabrication; Logic gates; MESFETs; Schottky diodes; Substrates; Ga2O3; Ga?O?; MESFETs; UV sensors; UV sensors.; mist chemical vapor deposition (Mist-CVD); power devices;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2477438
Filename :
7277044
Link To Document :
