Bistable 1060-nm High-Power Single-Mode DFB Laser Diode

Author

Shaoyang Tan ; Mengdie Sun ; Dan Lu ; Ruikang Zhang ; Wei Wang ; Chen Ji

Author_Institution

Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China

Volume

7

Issue

5

fYear

2015

Firstpage

1

Lastpage

7

Abstract

We report a novel high-power bistable distributed feedback (DFB) semiconductor laser diode operating near 1060 nm, which is realized by inserting a high-bandgap electron barrier layer and a grating layer in a super large optical cavity laser design. Optical and electrical bistable characteristics are both observed for this device. An on-state optical output power of 98 mW and an on-off extinction ratio of 22 dB were demonstrated between the bistable states. A qualitative physical model based on carrier population profile shift is used to explain the switching effect. Optical flip-flop operation was also demonstrated.

Keywords

diffraction gratings; distributed feedback lasers; laser cavity resonators; optical bistability; semiconductor lasers; ON-state optical output power; bistable high-power single-mode DFB laser diode; carrier population profile shift; distributed feedback semiconductor laser diode; electrical bistable characteristics; grating layer; high-bandgap electron barrier layer; on-off extinction ratio; optical bistable characteristics; optical cavity laser design; optical flip-flop operation; power 98 mW; switching effect; wavelength 1060 nm; Diode lasers; Optical bistability; Optical device fabrication; Optical reflection; Optical resonators; Optical switches; Stimulated emission; Bistable; DFB laser diode; distributed feedback (DFB) laser diode;

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2015.2483203

Filename

7286715