Author :
Macias-Montero, Jose-Gabriel ; Sarraj, Maher ; Chmeissani, Mokhtar ; Martinez, Ricardo ; Puigdengoles, Carles
Abstract :
We present a 16-channel readout integrated circuit (ROIC) with nanosecond-resolution time to digital converter (TDC) for pixelated Cadmium Telluride (CdTe) gamma-ray detectors. The 4×4 pixel array ROIC is the proof of concept of the 10×10 pixel array readout ASIC for positron-emission tomography (PET) scanner, positron-emission mammography (PEM) scanner, and Compton gamma camera. The electronics of each individual pixel integrates an analog front-end with switchable gain, an analog to digital converter (ADC), configuration registers, and a 4-state digital controller. For every detected photon, the pixel electronics provides the energy deposited in the detector with 10-bit resolution, and a fast trigger signal for time stamp. The ASIC contains the 16-pixel matrix electronics, a digital controller, five global voltage references, a TDC, a temperature sensor, and a band-gap based current reference. The ASIC has been fabricated with TSMC 0. 25 μm mixed-signal CMOS technology and occupies an area of 5. 3 mm×6.8 mm. The TDC shows a resolution of 95.5 ps, a precision of 600 ps at full width half maximum (FWHM), and a power consumption of 130 μW. In acquisition mode, the total power consumption of every pixel is 200 μW. An equivalent noise charge (ENC) of 160 e- RMS at maximum gain and negative polarity conditions has been measured at room temperature.
Keywords :
application specific integrated circuits; gamma-ray detection; mammography; positron emission tomography; semiconductor counters; time-digital conversion; 2D 4× 4 channel readout ASIC; Compton gamma camera; PEM scanner; PET scanner; analog-to-digital converter; gamma-ray detectors; medical imaging; pixelated Cadmium Telluride detectors; positron emission mammography; positron emission tomography; readout integrated circuit; time-to-digital converter; Application specific integrated circuits; Cadmium compounds; Detectors; Energy resolution; II-VI semiconductor materials; Noise; Photonics; Analog-digital conversion; application specific integrated circuits; energy resolution; gamma-ray detectors; low-power electronics; positron emission tomography; semiconductor radiation detectors;