Title :
A coarse-graining approach to rate equations of the composite AC-NBTI model
Author :
Murakami, Eiichi ; Aono, Hideki ; Ogasawara, Makoto
Author_Institution :
Dept. of Electr. Eng. & Inf. Technol., Kyushu Sangyo Univ., Fukuoka, Japan
Abstract :
For ac negative bias temperature instability (NBTI), the composite model that combines the reaction-diffusion (R-D) model for permanent component and the trap-detrap (T-D) model for recoverable component has almost been accepted. However, simple analytical formulas, which are useful for product qualification, have not yet been established. In this paper, we present a coarse-graining approach to analyze the rate equations in the T-D and R-D schemes. Here, the time-averaged rate equations are derived from the equations for stress and recovery phases. The analytical solutions obtained by solving this set of equations can explain the essential features of ac-NBTI, such as the duty-cycle dependence and the memory effect of hole-trapping determined by the standby condition. For the T-D scheme, the exact analytical solutions of the original equations verify this approach, whereas for the R-D scheme, the double-interface R-D model rather than the conventional R-D model captures the duty-cycle dependence observed in the experimental universal curve. Our experimental data on the ac-NBTI are also consistent with the developed analytical model providing a general validity of the approach presented here.
Keywords :
hole traps; negative bias temperature instability; semiconductor device models; AC negative bias temperature instability; T-D model; coarse-graining approach; composite AC-NBTI model; double interface R-D model; duty-cycle dependence; hole-trapping; memory effect; reaction-diffusion model; time-averaged rate equation; trap-detrap model; Analytical models; Hydrogen; Integrated circuit modeling; Mathematical model; Reliability; Silicon; Stress; AC negative bias temperature instability (NBTI); coarse-graining; rate equation; reaction-diffusion (R-D); reaction???diffusion (R???D); trap-detrap (T-D).; trap???detrap (T???D);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2478493