Title :
Broadband Circuit Techniques for Multi-Terahertz Gain-Bandwidth-Product Low-Power Applications
Author :
Gharib, Ahmed ; Weigel, Robert ; Kissinger, Dietmar
Author_Institution :
Inst. for Electron. Eng., Friedrich-Alexander-Univ. of Erlangen-Nuremberg, Erlangen, Germany
Abstract :
In this paper, two proposed bandwidth (BW) extension techniques are discussed and analytically analyzed. The capabilities of the proposed feedback techniques are demonstrated with two design examples of different circuitry, supported by simulation and measurement results. The first design example is a broadband low-power active balun, employing one of the presented feedback techniques. It is capable of operating with a gain of 2.2 dB and BW of more than 70 GHz. The amplitude imbalance is less than 2.4 dB, while the phase imbalance is below 7 ° up to 60 GHz and 14 ° up to 70 GHz, consuming a low-power of 29.7 mW. The second design example is a differential three-stage amplifier, incorporating the two techniques, where their combined performance achieves a gain of 54 dB and a 3-dB BW of 25 GHz, resulting in a gain-BW product (GBP) of 12.5 THz, with a power consumption of 180 mW from a 3.3-V supply. The chips are fabricated in a 0.35- μm SiGe:C bipolar technology with a ft/ fmax of 200/250 GHz.
Keywords :
Ge-Si alloys; baluns; circuit feedback; differential amplifiers; low-power electronics; terahertz wave devices; SiGe-C; bandwidth extension techniques; broadband circuit techniques; broadband low-power active balun; differential three-stage amplifier; frequency 200 GHz; frequency 25 GHz; frequency 250 GHz; gain 2.2 dB; gain 54 dB; multi-terahertz gain-bandwidth-product low-power applications; power 180 mW; power 29.7 mW; size 0.35 mum; voltage 3.3 V; Analytical models; Broadband communication; Gain; Impedance matching; Integrated circuit modeling; Power generation; Topology; Bipolar; SiGe; broad bandwidth (BW); broadband balun; feedback amplifiers; gain flatness; gain-BW product (GBP); group delay (GD); impedance matching; low power; wideband;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2015.2481398