DocumentCode :
3607779
Title :
A Single-Chip Electron Paramagnetic Resonance Transceiver in 0.13- \\mu m SiGe BiCMOS
Author :
Xuebei Yang ; Babakhani, Aydin
Author_Institution :
Electr. & Comput. Eng. Dept., Rice Univ., Houston, TX, USA
Volume :
63
Issue :
11
fYear :
2015
Firstpage :
3727
Lastpage :
3735
Abstract :
We report the first absorption-based single-chip transceiver for electron paramagnetic resonance (EPR) spectroscopy in silicon. The chip is implemented in a 0.13-μm SiGe BiCMOS process technology. The transmitter generates and delivers a continuous-wave microwave signal with a frequency range from 895 to 979 MHz and the receiver adopts a direct-conversion architecture. Based on the single-chip transceiver and a printed-circuit-board-based planar resonator, an EPR spectrometer is assembled and tested. The spectrometer successfully measures the EPR response from samples including 2,2-Diphenyl-1-Picrylhydrazyl powder, Fe3O4 nanoparticles, and Fe2O3 nanoparticles.
Keywords :
BiCMOS integrated circuits; EPR spectroscopy; Ge-Si alloys; UHF resonators; printed circuits; silicon; transceivers; 2,2-diphenyl-1-picrylhydrazyl powder; BiCMOS process technology; EPR response; EPR spectroscopy; SiGe; continuous-wave microwave signal; frequency 895 MHz to 979 MHz; nanoparticle; printed-circuit-board-based planar resonator; silicon; single-chip electron paramagnetic resonance transceiver; size 0.13 mum; Gain; Inductors; Mixers; Noise measurement; Receivers; Resonant frequency; Transceivers; BiCMOS; CMOS; SiGe; electron paramagnetic resonance (EPR); electron spin resonance (ESR); silicon; single-chip; transceiver;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2015.2481895
Filename :
7293242
Link To Document :
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