Title :
Quantum-Confined Stark Effect Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Electroabsorption Devices Based on Many-Body Theory
Author :
Fujisawa, Takeshi ; Saitoh, Kunimasa
Author_Institution :
Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan
Abstract :
Quantum-confined Stark effect (QCSE) of group IV Ge(Sn)/SiGe(Sn) quantum wells (QWs) on Si substrate is analyzed by microscopic many-body theory for mid-infrared (mid-IR) Si-based electroabsorption devices. To show the validity of the theory, QCSE of Ge/SiGe QW is investigated and very good agreement between theory and reported measured results is obtained. Next, the QCSE of GeSn/SiGeSn QWs is analyzed and the QW design for electroabsorption modulators to obtain large extinction ratio in mid-IR region is presented. It is shown that compressive and tensile strained well and barrier layers is preferable to obtain large extinction ratio due to its large conduction band offset.
Keywords :
Stark effect; conduction bands; electro-optical modulation; extinction coefficients; germanium compounds; integrated optics; integrated optoelectronics; many-body problems; semiconductor quantum wells; silicon compounds; GeSn-SiGeSn; QCSE; barrier layers; compressive strained well; conduction band offset; electroabsorption modulators; extinction ratio; large extinction ratio; many-body theory; microscopic many-body theory; mid-infrared Si-based electroabsorption devices; quantum wells; quantum-confined Stark effect analysis; tensile strained well; Absorption; Electric fields; Photonic band gap; Silicon; Silicon germanium; Strain; Tin; GeSn quantum wells; Si photonics; electroabsorption modulators; many-body theory; quantum-confined Stark effect;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2015.2488363
