Title :
A V-Band CMOS Divide-by-Three ILFD With Frequency-Dependent Injection Enhancement
Author :
Junyi Sun ; Chirn Chye Boon ; Fanyi Meng ; Xiang Yi ; Wei Meng Lim
Author_Institution :
IC Design Center of Excellence, Nanyang Technol. Univ., Singapore, Singapore
Abstract :
This letter presents a V-band divide-by-three injection-locked frequency divider (ILFD) with low power consumption and wide locking range, by using the novel frequency-dependent injection enhancement (FDIE) technique. The optimum tradeoff between amplitude and phase locking conditions of the FDIE circuit is first analyzed theoretically. Then a current-reused differential pre-amplifier loaded with a moderate-k transformer for FDIE circuit is proposed to obtain the greatest locking range under such trade-off. Fabricated in a 65 nm CMOS technology, the proposed ILFD prototype demonstrates a wide input locking range of 54.5-62.36 GHz (13.5%) and only 2.5 mA current consumption with 1.2 V supply.
Keywords :
CMOS analogue integrated circuits; differential amplifiers; frequency dividers; low-power electronics; millimetre wave amplifiers; power consumption; preamplifiers; transformers; CMOS technology; FDIE circuit; FDIE technique; V-band CMOS divide-by-three ILFD; current 2.5 mA; current-reused differential preamplifier; frequency 54.5 GHz to 62.36 GHz; frequency-dependent injection enhancement; injection-locked frequency divider; moderate-k transformer; phase locking; power consumption; size 65 nm; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Frequency conversion; Harmonic analysis; Power demand; Solid state circuits; Wireless communication; CMOS frequency divider; V-band; divide-by-three; frequency-dependent injection enhancement; injection-locked frequency divider (ILFD); transformer;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2015.2479840
