Title :
High-Performance RF Inductors and Capacitors Using the Reverse Trench Structure of Silicon
Author :
Jong-Min Yook ; Dongsu Kim ; Jun Chul Kim
Author_Institution :
Dept. of Electr. Packaging Res. Center, Korea Electron. Technol. Inst., Seongnam, South Korea
Abstract :
We propose new passive device structures using deep silicon trenches. High-aspect-ratio reverse trench structures coated with copper can be used to make signal lines of the spiral inductor, and a deep trench around the MIM capacitor can be used as a signal isolation wall after back-side thinning. A laminated organic is used to fill the trench. It is possible to make a 10:1 ratio metal pattern maximally, and all signal lines are fixed and isolated due to the laminated organic. Though the spiral inductor is realized on lossy silicon, its Q-factor is higher than 40 at 2 GHz. The fabricated 0.9 GHz LPF adjusting the reverse trench process has only 0.5 dB insertion loss with a very small size.
Keywords :
MIM devices; low-pass filters; passive networks; radiofrequency integrated circuits; LPF; MIM capacitor; RF capacitors; RF inductors; Si; back-side thinning; deep silicon trenches; frequency 0.9 GHz; frequency 2 GHz; loss 0.5 dB; passive device structure; reverse trench structure; spiral inductor; Capacitors; Inductors; MIM capacitors; Metals; Radio frequency; Silicon; Spirals; 0.9 GHz low-pass filter (LPF); High-Q inductor; integrated passive device (IPD); reverse trench;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2015.2479841
