Title :
A Wideband Doherty-Like Architecture Using a Klopfenstein Taper for Load Modulation
Author :
Bertran, Eduard ; Yahyavi, Mehran
Author_Institution :
Dept. of Signal Theor. & Commun., Tech. Univ. of Catalonia, Barcelona, Spain
Abstract :
A novel Doherty-like power amplifier (DPA) has been fabricated using 15 W, 2.7 GHz, GaN HEMT transistors. The quarter-wave transformer used in the classical DPA topology is replaced by a matching network including a Klopfenstein taper. From a practical prototype realization, this modification has demonstrated that the resulting DPA bandwidth (BW) is increased in comparison with the conventional topology while keeping the efficiency figures. Moreover, this design allows an easy tuning of the group delay through the output reactance of the taper, resulting in a more straightforward adjustments than other recently-published designs where the quarter-wave transformer is replaced by multi-section transmission lines (hybrid or similar). Experimental results have shown an average efficiency of 47.2% for the HSPA + modulation centered at 2.25 GHz.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; microwave power amplifiers; modulation; network topology; transformers; transmission lines; wide band gap semiconductors; wideband amplifiers; DPA bandwidth; DPA topology; Doherty-like power amplifier; GaN; GaN HEMT transistors; HSPA; Klopfenstein taper; frequency 2.25 GHz; frequency 2.7 GHz; load modulation; matching network; multisection transmission lines; power 15 W; quarter wave transformer; wideband Doherty-like architecture; Gallium nitride; Impedance; Power amplifiers; Wideband; Doherty power amplifier (DPA); Gallium nitride (GaN); Klopfenstein taper; drain efficiency; fractional bandwidth;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2015.2479847