DocumentCode :
3608304
Title :
Overshoot Stress on Ultra-Thin HfO2 High- 
Layer and Its Impact on Lifetime Extraction
Author :
Guangxing Wan ; Tianli Duan ; Shuxiang Zhang ; Lingli Jiang ; Bo Tang ; Yan, J. ; Chao Zhao ; Huilong Zhu ; Hongyu Yu
Author_Institution :
South Univ. of Sci. & Technol. of China, Shenzhen, China
Volume :
36
Issue :
12
fYear :
2015
Firstpage :
1267
Lastpage :
1270
Abstract :
Overshoot stress (stimulating the actual IC operating condition) on an ultra-thin HfO2 (EOT~0.8 nm) high-κ layer is investigated, which reveals that overshoot is of great importance to high-κ layer leakage degradation. The dynamic stress-induced leakage current is correlated with traps generation and recovery, which is dependent on stress input and release. A degradation model based on the oxygen vacancies is proposed to interpret the experimental observation.
Keywords :
hafnium compounds; leakage currents; oxygen; HfO2; IC; dynamic stress-induced leakage current; leakage degradation; lifetime extraction; size 0.8 nm; ultra-thin high-κ layer; Degradation; Hafnium oxide; High K dielectric materials; Leakage currents; Logic gates; Stress; High- $kappa $ dielectric; High-κ dielectric; SILC; overshoot; pulse stress;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2490719
Filename :
7298368
Link To Document :
