DocumentCode
3608417
Title
A Dual-Pass High Current Density Resonant Tunneling Diode for Terahertz Wave Applications
Author
Jacobs, K.J.P. ; Stevens, B.J. ; Wada, O. ; Mukai, T. ; Ohnishi, D. ; Hogg, R.A.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Volume
36
Issue
12
fYear
2015
Firstpage
1295
Lastpage
1298
Abstract
We report on a dual-pass high current density resonant tunneling diode (RTD) for terahertz wave applications. This technique reduces the overall fabrication complexity and improves the reproducibility for creating low resistance ohmic contacts. With our dual-pass technique, we demonstrate accurate control over the final device area by measuring the RTD current-voltage characteristic during the fabrication process and guiding the emitter current through the full RTD structure with a second contact electrode on the collector side. We go on to show how we may extract important information about the RTD performance using this method.
Keywords
electric current measurement; ohmic contacts; resonant tunnelling diodes; semiconductor device manufacture; semiconductor device measurement; submillimetre wave diodes; voltage measurement; RTD current-voltage characteristic; RTD structure; collector side; contact electrode; dual-pass resonant tunneling diode; dual-pass technique; emitter current; fabrication process; high current density resonant tunneling diode; low resistance ohmic contacts; terahertz wave applications; Current density; Fabrication; Resonant tunneling devices; Schottky barriers; Terahertz radiation; Voltage measurement; Manufacturability; Resonant Tunnelling Diode; Resonant tunnelling diode; Terahertz; manufacturability; terahertz;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2015.2491339
Filename
7299282
Link To Document