• DocumentCode
    3608417
  • Title

    A Dual-Pass High Current Density Resonant Tunneling Diode for Terahertz Wave Applications

  • Author

    Jacobs, K.J.P. ; Stevens, B.J. ; Wada, O. ; Mukai, T. ; Ohnishi, D. ; Hogg, R.A.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
  • Volume
    36
  • Issue
    12
  • fYear
    2015
  • Firstpage
    1295
  • Lastpage
    1298
  • Abstract
    We report on a dual-pass high current density resonant tunneling diode (RTD) for terahertz wave applications. This technique reduces the overall fabrication complexity and improves the reproducibility for creating low resistance ohmic contacts. With our dual-pass technique, we demonstrate accurate control over the final device area by measuring the RTD current-voltage characteristic during the fabrication process and guiding the emitter current through the full RTD structure with a second contact electrode on the collector side. We go on to show how we may extract important information about the RTD performance using this method.
  • Keywords
    electric current measurement; ohmic contacts; resonant tunnelling diodes; semiconductor device manufacture; semiconductor device measurement; submillimetre wave diodes; voltage measurement; RTD current-voltage characteristic; RTD structure; collector side; contact electrode; dual-pass resonant tunneling diode; dual-pass technique; emitter current; fabrication process; high current density resonant tunneling diode; low resistance ohmic contacts; terahertz wave applications; Current density; Fabrication; Resonant tunneling devices; Schottky barriers; Terahertz radiation; Voltage measurement; Manufacturability; Resonant Tunnelling Diode; Resonant tunnelling diode; Terahertz; manufacturability; terahertz;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2015.2491339
  • Filename
    7299282