DocumentCode :
3608417
Title :
A Dual-Pass High Current Density Resonant Tunneling Diode for Terahertz Wave Applications
Author :
Jacobs, K.J.P. ; Stevens, B.J. ; Wada, O. ; Mukai, T. ; Ohnishi, D. ; Hogg, R.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Volume :
36
Issue :
12
fYear :
2015
Firstpage :
1295
Lastpage :
1298
Abstract :
We report on a dual-pass high current density resonant tunneling diode (RTD) for terahertz wave applications. This technique reduces the overall fabrication complexity and improves the reproducibility for creating low resistance ohmic contacts. With our dual-pass technique, we demonstrate accurate control over the final device area by measuring the RTD current-voltage characteristic during the fabrication process and guiding the emitter current through the full RTD structure with a second contact electrode on the collector side. We go on to show how we may extract important information about the RTD performance using this method.
Keywords :
electric current measurement; ohmic contacts; resonant tunnelling diodes; semiconductor device manufacture; semiconductor device measurement; submillimetre wave diodes; voltage measurement; RTD current-voltage characteristic; RTD structure; collector side; contact electrode; dual-pass resonant tunneling diode; dual-pass technique; emitter current; fabrication process; high current density resonant tunneling diode; low resistance ohmic contacts; terahertz wave applications; Current density; Fabrication; Resonant tunneling devices; Schottky barriers; Terahertz radiation; Voltage measurement; Manufacturability; Resonant Tunnelling Diode; Resonant tunnelling diode; Terahertz; manufacturability; terahertz;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2491339
Filename :
7299282
Link To Document :
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