Integrated a-Si:H Gate Driver With Low-Level Holding TFTs Biased Under Bipolar Pulses

Author

Zhijin Hu ; Congwei Liao ; Wenjie Li ; Limei Zeng ; Chang-Yeh Lee ; Shengdong Zhang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

62

Issue

12

fYear

2015

Firstpage

4044

Lastpage

4050

Abstract

A hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) gate driver on array with low-level holding TFTs (LLH TFTs) biased under bipolar pulse is investigated. It is shown that the bipolar bias at low frequency significantly alleviates the threshold voltage shift of the LLH TFTs. As a result, the lifetime of the proposed gate driver is demonstrated to be several times of that under the conventional unipolar pulse bias. In addition, the improvement in the lifetime becomes more significant at the higher work temperature. The liquid crystal display television panels (32-in, 1366 × RGB × 768) with the proposed a-Si:H gate drivers integrated on array are manufactured, and the feasibility of the proposed driving scheme is well verified.

Keywords

amorphous semiconductors; driver circuits; elemental semiconductors; liquid crystal displays; silicon; thin film transistors; Si:H; bipolar bias; bipolar pulse; hydrogenated amorphous silicon; integrated a-Si:H gate driver; liquid crystal display television panels; low-level holding TFT; thin-film transistor; threshold voltage shift; unipolar pulse bias; Amorphous silicon; Stress; Stress measurement; Temperature measurement; Thin film transistors; Threshold voltage; Amorphous silicon (a-Si); bipolar pulse; gate driver; lifetime; threshold voltage shift ( $Delta V_{mathrm {TH}}$ ); threshold voltage shift (Δ VTH).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2487836

Filename

7300406