Title :
Observation of zero linewidth enhancement factor at excited state band in quantum dot laser
Author :
Zubov, F.I. ; Maximov, M.V. ; Moiseev, E.I. ; Savelyev, A.V. ; Shernyakov, Y.M. ; Livshits, D.A. ; Kryzhanovskaya, N.V. ; Zhukov, A.E.
Author_Institution :
St. Petersburg Acad. Univ., St. Petersburg, Russia
Abstract :
The linewidth enhancement factor (LEF) of an InAs/InGaAs quantum dot Fabry-Pérot laser in a wide wavelength range from 1110 to 1300 nm, including ground state (GS) and exited state (ES) bands, is studied. LEF spectra were derived from amplified spontaneous emission spectra measured below the threshold in the pulse regime. The ES optical transition is characterised by significantly lower values of the LEF (≤0.54) as compared to the GS (≥1.21). Moreover, a zero LEF is observed within the ES spectral band. At sufficiently high currents, a near-zero LEF (|α| ≤ 0.1) is achieved in a wide spectral interval from 1146 to 1175 nm, in which the optical gain is not less than 9 cm-1.
Keywords :
Fabry-Perot resonators; III-V semiconductors; excited states; gallium arsenide; ground states; indium compounds; laser beams; quantum dot lasers; spontaneous emission; InAs-InGaAs; amplified spontaneous emission spectra; excited state band; ground state; optical gain; optical transition; quantum dot Fabry-Perot laser; wavelength 1110 nm to 1300 nm; zero linewidth enhancement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.2512