A Surface Potential-Based Gate-Leakage Current Model for Organic Thin-Film Transistors

Author

Guangwei Xu ; Wei Wang ; Long Wang ; Zhiwei Zong ; Congyan Lu ; Lingfei Wang ; Banerjee, Writam ; Zhuoyu Ji ; Hong Wang ; Ling Li ; Ming Liu

Author_Institution

Lab. of Nanofabrication & Novel Devices Integration Technol., Inst. of Microelectron., Beijing, China

Volume

62

Issue

12

fYear

2015

Firstpage

4225

Lastpage

4230

Abstract

In this paper, a surface potential-based gate-leakage current (GLC) model for organic thin-film transistors is proposed. It is found that the Poole-Frenkel emission is the main mechanism of GLC, which can be well described by our model for both accumulation and depletion modes. In addition, the source and drain partitions of the channel leakage current can be well explained based on our model. Furthermore, the dependence of GLC on drain voltage, temperature, and material disorder has been discussed in detail, which yields perfect agreement with the experimental data.

Keywords

Poole-Frenkel effect; leakage currents; semiconductor device models; surface potential; thin film transistors; Poole-Frenkel emission; accumulation mode; channel leakage current; depletion mode; drain partition; gate leakage current model; organic thin film transistors; source partition; surface potential; Leakage currents; Microelectronics; Organic thin film transistors; Semiconductor device modeling; Gate-leakage current (GLC); Poole-Frenkel emission; Poole???Frenkel emission; organic thin-film transistors (OTFTs); surface potential; surface potential.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2487282

Filename

7302027