DocumentCode
3608889
Title
Sezawa Propagation Mode in GaN on Si Surface Acoustic Wave Type Temperature Sensor Structures Operating at GHz Frequencies
Author
Muller, Alexandru ; Giangu, Ioana ; Stavrinidis, Antonis ; Stefanescu, Alexandra ; Stavrinidis, George ; Dinescu, Adrian ; Konstantinidis, George
Author_Institution
Nat. Inst. for R&D in Microtechnologies, Bucharest, Romania
Volume
36
Issue
12
fYear
2015
Firstpage
1299
Lastpage
1302
Abstract
This letter investigates the applicability of Sezawa propagation mode for various GaN/Si surface acoustic wave (SAW) temperature sensor structures. First, different acoustic propagation modes in GaN on Si single SAW resonators, operating at GHz frequencies, were evaluated. The variation of the phase velocity versus the normalized thickness of the GaN layer is analyzed experimentally for different propagation modes, on the SAW structures manufactured using e-beam lithography. The different acoustic modes were also identified using finite-element method calculations. The effective coupling coefficients for the Sezawa mode are determined and show larger values than those obtained for the Rayleigh mode. The sensitivities obtained for the temperature sensor structures are 1.8 times higher for Sezawa than for the fundamental Rayleigh mode.
Keywords
III-V semiconductors; acoustic wave propagation; electron beam lithography; elemental semiconductors; finite element analysis; gallium compounds; silicon; surface acoustic wave sensors; temperature measurement; temperature sensors; wide band gap semiconductors; GaN-Si; SAW temperature sensor structure; Sezawa propagation mode; acoustic propagation mode; e-beam lithography; effective coupling coefficient; finite element method calculation; fundamental Rayleigh mode; phase velocity; single SAW resonator; surface acoustic wave type temperature sensor structure; Gallium nitride; Resonant frequency; Silicon; Surface acoustic wave devices; Surface acoustic waves; Temperature sensors; Resonance; Surface acoustic wave devices; resonance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2015.2494363
Filename
7305747
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