Title :
Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
Author :
Huy Binh Do ; Quang Ho Luc ; Minh Thien Huu Ha ; Hu, Chenming Calvin ; Yueh Chin Lin ; Chang, Edward Yi
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
AlN has successfully been applied to passivate the oxide/III-V interface; however, it changes both the metal work function (WF) and band alignment of the gate-stack and, thus, affects the power consumption of the devices. We found that the AlN layer induces a dipole δ = 0.18 eV between HfO2 and substrate. The dipole value obtained from capacitance- voltage characteristics performs good agreement with the results of X-ray photoelectron spectroscopic measurements. The effective WF of Ni is found to be 5.55 eV, which is larger than its WF in vacuum. The valance band offset and the conduction band offset of HfO2 with AlN/In0.53Ga0.47As are found to be 2.82 and 2.06 eV, respectively.
Keywords :
III-V semiconductors; X-ray photoelectron spectra; aluminium compounds; conduction bands; gallium arsenide; hafnium compounds; indium compounds; nickel; passivation; valence bands; wide band gap semiconductors; work function; AlN; Ni-HfO2-In0.53Ga0.47As; X-ray photoelectron spectroscopic measurements; band alignment; capacitance-voltage characteristics; conduction band offset; electron volt energy 0.18 eV; electron volt energy 2.06 eV; electron volt energy 2.82 eV; gate-stack; interfacial dipole; oxide/III-V interface; passivation; valance band offset; work function; Aluminum nitride; Hafnium oxide; III-V semiconductor materials; Indium gallium arsenide; Nickel; AlN interfacial dipole; HfO₂.; HfO2; band alignment; effective work function (EWF) of Ni;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2489224
